Infrared Absorption Study of Unannealed and Annealed Hydrogenated Amorphous Silicon Films Deposited in an Asymmetric R.F. Plasma CVD System at Room Temperature

Infrared Absorption Study of Unannealed and Annealed Hydrogenated Amorphous Silicon Films Deposited in an Asymmetric R.F. Plasma CVD System at Room Temperature

Author(s):

Publication title:

Physics of - Semiconductor Devices -

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3316

Pub. Year:

1998

Vol.:

Part 1

Page(from):

648

Page(to):

651

Pub. info.:

New Delhi: Narosa Publishing House

ISSN:

0277786X

ISBN:

9780819427564 [081942756X]

Language:

English

Call no.:

P63600/3316

Type:

Conference Proceedings

Details

TDL ID:	ZA00016921
Series ID:	PA00000029
Conf. info. (Name):	International Workshop on the Physics of Semiconductor Devices - IWDPSD
Conf. info. (Number):	1997 : 9th
Conf. info. (Venue):	Delhi, India
Conf. info. (Date):	1997.12.16-1997.12.20

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