Doping Behaviour of In0.53Ga0.47As and InP Grown by Metalorganic Vapour Phase Epitaxy

Doping Behaviour of In0.53Ga0.47As and InP Grown by Metalorganic Vapour Phase Epitaxy

Author(s):

Publication title:

Physics of - Semiconductor Devices -

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3316

Pub. Year:

1998

Vol.:

Part 1

Page(from):

289

Page(to):

292

Pub. info.:

New Delhi: Narosa Publishing House

ISSN:

0277786X

ISBN:

9780819427564 [081942756X]

Language:

English

Call no.:

P63600/3316

Type:

Conference Proceedings

Details

TDL ID:	ZA00016921
Series ID:	PA00000029
Conf. info. (Name):	International Workshop on the Physics of Semiconductor Devices - IWDPSD
Conf. info. (Number):	1997 : 9th
Conf. info. (Venue):	Delhi, India
Conf. info. (Date):	1997.12.16-1997.12.20

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