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Formation of SiC, Si3N4, and SiO2 by high-dose ion implantation and laser annealing

Author(s):
  • Chiang, S.W. ( General Electric Corporate Research and Development, Schenectady, New York, 12301, USA )
  • Liu, Y.S. ( General Electric Corporate Research and Development, Schenectady, New York, 12301, USA )
  • Reihl, R.F. ( General Electric Corporate Research and Development, Schenectady, New York, 12301, USA )
Publication title:
Laser and electron-beam solid interactions and materials processing : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposia proceedings
Ser. no.:
1
Pub. Year:
1981
Page(from):
407
Page(to):
412
Pub. info.:
New York: North Holland
ISSN:
02729172
ISBN:
9780444005953 [0444005951]
Language:
English
Call no.:
M23500/1
Type:
Conference Proceedings

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