Cw argon ion laser annealed B and as implanted diodes in oxide defined silicon devices

Cw argon ion laser annealed B and as implanted diodes in oxide defined silicon devices

Author(s):

Sedgwick, T.O. ( IBM T.J. Watson Research Center, Yorktown Heights, New York, USA )
Solomon, P.M. ( IBM T.J. Watson Research Center, Yorktown Heights, New York, USA )
Vollmer, H.J. ( IBM T.J. Watson Research Center, Yorktown Heights, New York, USA )

Publication title:

Laser and electron-beam solid interactions and materials processing : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposia proceedings

Ser. no.:

1

Pub. Year:

1981

Page(from):

337

Page(to):

343

Pub. info.:

New York: North Holland

ISSN:

02729172

ISBN:

9780444005953 [0444005951]

Language:

English

Call no.:

M23500/1

Type:

Conference Proceedings

Details

TDL ID:	ZA00016904
Series ID:	PA00000010
Conf. info. (Name):	Materials Research Society Annual Meeting
Conf. info. (Number):	1980
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1980.11.00

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