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Interface Characterization of GaInAs-InP Superlattices Grown by Low Pressure Metalorganic Chemical Vapor Deposition

Author(s):
Publication title:
Properties of impurity states in superlattice semiconductors
Title of ser.:
NATO ASI series. Series B, Physics
Ser. no.:
183
Pub. Year:
1988
Page(from):
43
Page(to):
61
Pages:
19
Pub. info.:
New York: Plenum Press
ISBN:
9780306430091 [0306430096]
Language:
English
Call no.:
N11479/183
Type:
Conference Proceedings

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