Porous SiC substrate materials for high-quality epitaxial and bulk growth | 東京工業大学附属図書館文献データベース

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Porous SiC substrate materials for high-quality epitaxial and bulk growth

Author(s):

Kryzhanovski, A.

Publication title:

Substrate engineering - paving the way to epitaxy : sympoisum held November 29-December 3, 1999, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

587

Pub. Year:

2000

Page(from):

O8.6.1

Pub. info.:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994959 [1558994955]

Language:

English

Call no.:

M23500/587

Type:

Conference Proceedings

Details

TDL ID:	ZA00016704
Series ID:	PA00000011
Conf. info. (Name):	MRS Fall Meeting
Conf. info. (Number):	1999
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1999.11.29-1999.12.03

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