Stress-induced leakage currents of CMOS ULSI devices with shallow trench isolation

Stress-induced leakage currents of CMOS ULSI devices with shallow trench isolation

Author(s):

Sundaresan,R. ( Chartered Semiconductor Manufacturing,Ltd. )
Gan,C.H.
Peidous,I.V.

Publication title:

Microelectronic Device Technology III

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3881

Pub. Year:

1999

Page(from):

224

Page(to):

233

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819434784 [0819434787]

Language:

English

Call no.:

P63600/3881

Type:

Conference Proceedings

Details

TDL ID:	ZA00016694
Series ID:	PA00000029
Conf. info. (Name):	Microelectronic Manufacturing : Microelectronic Dvece Technology
Conf. info. (Number):	1999 : 3rd
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1999.09.22-1999.09.23

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