Raman characterization of composition and strain in Si1-xGex/Si heterostructures

Raman characterization of composition and strain in Si1-xGex/Si heterostructures

Author(s):

Publication title:

Nondestructive methods for materials characterization : symposium held November 29-30, 1999, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

591

Pub. Year:

2000

Page(from):

277

Pub. info.:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994997 [1558994998]

Language:

English

Call no.:

M23500/591

Type:

Conference Proceedings

Details

TDL ID:	ZA00016644
Series ID:	PA00000011
Conf. info. (Name):	Nondestructive Methods for Materials Characterization : Symposium
Conf. info. (Number):	1999
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1999.11.29-1999.11.30

Similar Items:

1 Conference Proceedings A Phenomenological Model for Accurate Determination of Relaxation and Ge Content in Si1-xGex Layers by Raman Line Shift and X-ray Diffractometry Bhagavannarayana,G., Dietrich,B., Zaumseil,P., Dombrowski,K.F. Narosa Publishing House	7 Conference Proceedings Strain Relaxation of He+ Implanted, Pseudomorphic Si1-xGex Layers on Si(100) Hollander, B., Mantl, S., Lenk, St., Trinkaus, H., Kirch, D., Luysberg, M., Hackbarth, Th., Herzog, H.-J., Fichtner, … Materials Research Society
2 Conference Proceedings Raman Spectroscopy of Epitaxial Si/Si1-xGex Heterostructures Liu, Ran, Zollner, Stefan, Liaw, Ming, O'Meara David, Cave, Nigel MRS - Materials Research Society	8 Conference Proceedings RELAXATION DEFECT CHARACTERIZATION OF RTCVD Si1-XGeX/Si HETEROSTRUCTURES BY ELECTRICAL AND OPTICAL TECHNIQUES Souifi, A., Bremond, G., Benyattou, T., Guillot, G., Dutartre, D. Materials Research Society
3 Conference Proceedings Growth of Si1-xGex/Si Heterostructures by RPCVD and their Characterization Arora,R.S., Venkateswaran,R., Pal,R., Datta,P., Kesavan,R., Maiti,Chinmay K. SPIE - The International Society for Optical Engineering	9 Conference Proceedings CHARACTERIZATION OF Si1-xGex/Si HETEROSTRUCTURES USING OPTICALLY-DETECTED MAGNETIC RESONANCE Kennedy, T.A., Glaser, E.R., Trombetta, J.M., Wang, K.L., Chern, C.H., Albert-Engels, V. Materials Research Society
4 Conference Proceedings COMPOSITION DEPENDENCE OF HARDNESS AND MODULI IN GeSi/Si-HETEROSTRUCTURES MEASURED BY NANOINDENTATION Roos, B. S., Richter, H., Morgenstern, T., Tillack, B. MRS - Materials Research Society	10 Conference Proceedings *EPITAXIAL GROWTH OF Si1-XGeX/Si HETEROSTRUCTURES BY LIMITED REACTION PROCESSING FOR MINORITY CARRIER DEVICE APPLICATIONS King, C. A., Hoyt, J. L., Noble, D. B, Gronet, C. M., Gibbons, J. F., Scott, M. P., Laderman, S. S., Kamains, T. I., … Materials Research Society
5 Conference Proceedings THE STABILITY OS Si-Si1-xGex STRAINES LAYER HETEROSTRUCTURES Houghton, D.C., Baribeau,J-M., Song, K, Perovic, D.D. Materials Research Society	11 Conference Proceedings Lattice Strain and Defects in Epitaxial Silicon Wafers* Kirscht,F., Snegirev,B., Zaumseil,P., Kissinger,G., Takashima,K., Wildes,P., Hennessy,J. SPIE-The International Society for Optical Engineering
6 Conference Proceedings Growth and characterization of Si-Si1-xGex-GaAs heterostructure with InGaAs quantum dots Burbaev, T.M., Kazakov, I.P., Kurbatov, V.A., Rzaev, M.M., Vdovin, V.I. SPIE-The International Society for Optical Engineering	12 Conference Proceedings Lattice Strain and Defects in Epitaxial Silicon Wafers Kirscht, F., Snegirev, B., Zaumseil, P., Kissinger, G., Takashima, K., Wildes, P., Hennessy, J. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12