MOCVD growth and properties of erbium-doped GaAs

MOCVD growth and properties of erbium-doped GaAs

Author(s):

Publication title:

Rare earth doped semiconductors : symposium held April 13-15, 1993, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

301

Pub. Year:

1993

Page(from):

15

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558991972 [1558991972]

Language:

English

Call no.:

M23500/301

Type:

Conference Proceedings

Details

TDL ID:	ZA00016596
Series ID:	PA00000011
Conf. info. (Name):	Symposium on rare earth doped semiconductors
Conf. info. (Number):	1993
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1993.04.13-1993.04.15

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