Dose Rate Dependence of the Amorphization of Silicon Carbide

Dose Rate Dependence of the Amorphization of Silicon Carbide

Author(s):

Snead, L. L.

Publication title:

Microstructural processes in irradiated materials : symposium held November 30-December 2, 1998, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

540

Pub. Year:

1999

Page(from):

165

Pub. info.:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994461 [1558994467]

Language:

English

Call no.:

M23500/540

Type:

Conference Proceedings

Details

TDL ID:	ZA00016593
Series ID:	PA00000011
Conf. info. (Name):	Symposium on microstructural processes in irradiated materials
Conf. info. (Number):	1998
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1998.11.30-1998.12.02

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