Electrical Defects of Shallow (p+/n) Junctions Formed by Boron Implantation Into Ge-Preamorphized Si Substrates

Electrical Defects of Shallow (p+/n) Junctions Formed by Boron Implantation Into Ge-Preamorphized Si Substrates

Author(s):

Publication title:

Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

469

Pub. Year:

1997

Page(from):

413

Pub. info.:

Pittsburg, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993730 [1558993738]

Language:

English

Call no.:

M23500/469

Type:

Conference Proceedings

Details

TDL ID:	ZA00016586
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defects and diffusion in silicon processing
Conf. info. (Number):	1997
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1997.04.01-1997.04.04

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