Experimental Investigation of Transient-Enhanced Diffusion (TED) of Phosphorous Implants in Silicon in the MeV Range

Experimental Investigation of Transient-Enhanced Diffusion (TED) of Phosphorous Implants in Silicon in the MeV Range

Author(s):

Publication title:

Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

469

Pub. Year:

1997

Page(from):

309

Pub. info.:

Pittsburg, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993730 [1558993738]

Language:

English

Call no.:

M23500/469

Type:

Conference Proceedings

Details

TDL ID:	ZA00016586
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defects and diffusion in silicon processing
Conf. info. (Number):	1997
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1997.04.01-1997.04.04

Similar Items:

1 Conference Proceedings Effect Of Nitrogen Implants On Boron Transient Enhanced Diffusion Dokumaci, Omer, Ronsheim, Paul, Hegde, Suri, Chidambarrao, Dureseti, Shaik-Adam, Lahir, Law, Mark E. Materials Research Society	7 Conference Proceedings TRANSIENT ENHANCED DIFFUSION AND GETTERING OF DOPANTS IN ION IMPLANTED SILICON Pennycook, S. J., Narayan, J., Culbertson, R. J. Materials Research Society
2 Conference Proceedings Diffusion of Implanted Nitrogen in Silicon at High Doses Adam, Lahir Shaik, Robertson, Lance, Law, Mark E., Jones, Kevin, Gable, Kevin, Hegde, Suri, Dokumaci, Omer Materials Research Society	8 Conference Proceedings The Source Of Transient Enhanced Diffusion In Sub-KeV Implanted Boron In Crystalline Silicon Napolitani, Enrico, Carnera, A., Privitera, V., Schroer, E., Marmino, G., Priolo, F., Moffatt, S. Materials Research Society
3 Conference Proceedings Diffusion and Defect Structure in Nitrogen Implanted Silicon Dokumaci, Omer, Kaplam, Richard, Khare, Mukesh, Ronsheim, Paul, Burnham, Jay, Domenicucci, Anthony, Li, Jinghong, … Materials Research Society	9 Conference Proceedings The Role of Vacancies and Interstitials in Transient-Enhanced Diffusion of Arsenic Implanted Into Silicon Venables, D., Krishnamoorthy, V., Gossmann, H-J., Lilak, A., Jones, K. S., Jacobson, D. C. MRS - Materials Research Society
4 Conference Proceedings A SIMPLE MODEL FOR THE TRANSIENT, ENHANCED DIFFUSION OF ION-IMPLANTED PHOSPHOROUS IN SILICON Morehead, F. F., Hodgson, R. T. Materials Research Society	10 Conference Proceedings Modeling of phosphorous diffusion in ion-implanted Si at dopant transient enhanced out-diffusion during vacuum rapid thermal annealing Kagadei, V.A., Markov, A.B. SPIE - The International Society of Optical Engineering
5 Conference Proceedings TRANSIENT ENHANCED DIFFUSION IN B+ AND P+ IMPLANTED SILICON Pennycook, S.J., Culbertson, R.J. Materials Research Society	11 Conference Proceedings Nitrogen Implantation and Diffusion in Silicon Adam, L. S., Law, M. E., Dokumaci, O., Haddara, Y., Murthy, C., Park, H., Hegde, S., Chidambarrao, D., Mollis, S., … MRS - Materials Research Society
6 Conference Proceedings Experimental Evidence of Long-Range Point Defect-Phosphorous Pair Diffusion in Silicon Ammar Nayfeh, Viktor Koldyaev Materials Research Society	12 Conference Proceedings Effect of End-of-Range Defects, Arsenic Clustering, and Precipitation on Transient-Enhanced Diffusion in As+- Implanted Si Krishnamoorthy, V., Venables, D., Moeller, K., Jones, K. S., Jackson, J. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12