Formation and Binding Energies of Vacancy Clusters in Silicon
- Author(s):
- Publication title:
- Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 469
- Pub. Year:
- 1997
- Page(from):
- 205
- Pub. info.:
- Pittsburg, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993730 [1558993738]
- Language:
- English
- Call no.:
- M23500/469
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Tight-Binding Molecular Dynamics Simulations on Point Defects Diffusion and Interactions in Crystalline Silicon
MRS - Materials Research Society |
7
Conference Proceedings
Molecular Dynamics Studies of the Ion Beam Induced Crystallization in Silicon
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
10
Conference Proceedings
Atomic Scale Simulations of Arsenic Ion Implantation and Annealing in Silicon
Electrochemical Society |
5
Conference Proceedings
Simulation of Vacancy Cluster Formation and Binding Energies in Single Crystal Germanium
Materials Research Society |
11
Conference Proceedings
DEFECT INDUCED AMORPHIZATION IN SILICON: A TIGHT BINDING MOLECULAR DYNAMICS SIMULATION
MRS - Materials Research Society |
MRS - Materials Research Society |
12
Conference Proceedings
Defect induced amorphization in silicon: a tight binding molecular dynamics simulation
MRS - Materials Research Society |