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Growth of Silicon-Doped and High Quality, Highly Resistive GaN for FET Applications

Author(s):
Publication title:
Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
395
Pub. Year:
1996
Page(from):
897
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992986 [1558992987]
Language:
English
Call no.:
M23500/395
Type:
Conference Proceedings

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