Schottky Barrier Heights of Ni, Pt, Pd, and Au on n-type GaN
- Author(s):
- Publication title:
- Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 395
- Pub. Year:
- 1996
- Page(from):
- 831
- Pub. info.:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992986 [1558992987]
- Language:
- English
- Call no.:
- M23500/395
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Effects of Reactive Ion Etching on the Electrical Properties of n-GaN Surfaces
MRS - Materials Research Society |
MRS - Materials Research Society |
2
Conference Proceedings
Characteristics of Ti/Pt/Au ohmic contacts on ヲム-type GaN/AlxGA1-xN superlattices
MRS-Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering, Narosa |
MRS - Materials Research Society |
SPIE - The International Society of Optical Engineering |
5
Conference Proceedings
DC and Microwave Characteristics of High Transconductance AlGaN/GaN Heterostructure Field-Effect Transistors on SiC Substrates
MRS - Materials Research Society |
11
Conference Proceedings
Point-Defect Generation in Ni-, Pd-, and Pt-Germanided Schottky Bafflers on N-Type Germanium Substrates
Electrochemical Society |
6
Conference Proceedings
Engineering the Schottky barrier heights in InGaAs metal-semiconductor-metal photodetectors
SPIE-The International Society for Optical Engineering |
12
Conference Proceedings
Response Mechanism of Pd-GaN Schottky Barriers Comparative to Pd-Si Gas Sensors
Trans Tech Publications |