2.2 eV Luminescence in GaN
- Author(s):
Hofmann, D. M. Kovalev, D. Steude, G. Volm, D. Meyer, B. K. Xavier, C. Monteiro, T. Pereira, E. Mokov, E. N. Amano, H. Akasaki, I. - Publication title:
- Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 395
- Pub. Year:
- 1996
- Page(from):
- 619
- Pub. info.:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992986 [1558992987]
- Language:
- English
- Call no.:
- M23500/395
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
8
Conference Proceedings
Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
Trans Tech Publications |
MRS - Materials Research Society |
9
Conference Proceedings
Spatially-Resolved Photoluminescence and Raman Study on the GaN/Substrate Interface
MRS - Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Selective Dynamical Study of Luminescences Near the Surface and the Interface of Epitaxial GaN
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
12
Conference Proceedings
Photoluminescence Related to the 2-Dimensional Electron Gas in Modulation Doped GaN/AlGaN Structures
MRS - Materials Research Society |