Blank Cover Image

Dielectric Functions of Wurtzite and Zincblende Structure GaN

Author(s):
Publication title:
Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
395
Pub. Year:
1996
Page(from):
601
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992986 [1558992987]
Language:
English
Call no.:
M23500/395
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Shallow Impurity States in Wurtzite and Zinc Blende Structure GaN

Wang, R., Ruden, P. P., Kolnik, J., Oguzman, I., Brennan, K. F.

MRS - Materials Research Society
7 Conference Proceedings Monte Carlo Simulation of Hall Effect in n-Type GaN

Albrecht, J. D., Ruden, P. P., Bellotti, E., Brennan, K. F.

MRS - Materials Research Society
2 Conference Proceedings Monte Carlo Calculation of Hole Transport in Bulk Zincblende Phase of GaN Including a Pseudopotential Calculated Band Structure

Oguzman, I. H., Kolnik, J., Brennan, K. F., Wang, R., Ruden, P. P.

MRS - Materials Research Society
8 Conference Proceedings Optical Properties of Wurtzite-and Zincblende-GaN Films Grown by RF Plasma-MBE

Semendy, F., Bambha, N., Kim, J. G., Liu, H., Park, R. M.

MRS - Materials Research Society
3 Conference Proceedings Comparison of Electron and Hole Initiated Impact Ionization in Zinc Blende and Wurtzite Phase Gallium Nitride

Bellotti, E., Oguzman, I. H., Kolnik, J., Brennan, K. F., Wang, R., Ruden, P. P.

MRS - Materials Research Society
9 Conference Proceedings Monte Carlo Calculation of High- and Low-Field AlxGa1-x N Electron Transport Characteristics

Albrecht, J. D., Wang, R., Ruden, P. P., Farahmand, M., Bellotti, E., Brennan, K. F.

MRS - Materials Research Society
4 Conference Proceedings Theoretical Study of Electron Initiated Impact Ionization Rate in Bulk GaN Using a Wave Vector Dependent Numerical Transition Rate Formulation

Kolnik, J., Oguzman, I. H., Brennan, K. F., Wang, R., Ruden, P. P.

MRS - Materials Research Society
10 Conference Proceedings A COMPARISON OF THE WURTZITE AND ZINCBLENDE BAND STRUCTURES FOR SiC, AIN AND GaN

Lambrecht, W.R.L., Segall, B.

Materials Research Society
5 Conference Proceedings Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio

Kolnik, J., Oguzman, I. H., Brennan, K. F., Wang, R., Ruden, P. P.

MRS - Materials Research Society
11 Conference Proceedings GROWTH OF HIGH-RESISTIVITY WURTZITE AND ZINCBLENDE STRUCTURE SINGLE CRYSTAL GaN BY REACTIVE-ION MOLECULAR BEAM EPITAXY

Powell, R.C., Tomasch, G.A., Kim, Y.-W., Thornton, J.A., Greene, J.E.

Materials Research Society
6 Conference Proceedings Full band monte carlo comparison of wurtzite and zincblende phase GaN MESFETs

Farahmand, M., Brennan, K. F.

MRS-Materials Research Society
12 Technical Paper Ensemble Monte Carlo calculation of the hole initiated impact ionization rate in bulk GaAs and silicon using a k-dependent, numerical transition rate …

Oguzman, Ismail H., Wang, Yang, Kolnik, Jan, Brennan, Kevin F.

National Aeronautics and Space Adminstration
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12