Near-Bandgap Photoluminescence Decay Time in GaN Epitaxial Layers Grown on Sapphire

Near-Bandgap Photoluminescence Decay Time in GaN Epitaxial Layers Grown on Sapphire

Author(s):

Publication title:

Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

395

Pub. Year:

1996

Page(from):

559

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992986 [1558992987]

Language:

English

Call no.:

M23500/395

Type:

Conference Proceedings

Details

TDL ID:	ZA00016579
Series ID:	PA00000011
Conf. info. (Name):	International symposium on gallium nitride and related materials
Conf. info. (Number):	1st
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1995.11.27-1995.12.01

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