ScAlMgO4: An Oxide Substrate for GaN Epitaxy
- Author(s):
Hellman, E. S. Brandle, C. D. Schneemeyer, L. F. Wiesmann, D. Brener, I. Siegrist, T. Berkstresser, G. W. Buchanan, D. N. E. Hartford, E. H., Jr. - Publication title:
- Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 395
- Pub. Year:
- 1996
- Page(from):
- 51
- Pub. info.:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992986 [1558992987]
- Language:
- English
- Call no.:
- M23500/395
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
MOLECULAR BEAM EPITAXY OF SUPERCONDUCTING BISMUTHATES ON VARIOUS SUBSTRATES
Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
3
Conference Proceedings
MOLECULAR BEAM EPITAXY OF RUBIDIUM BARIUM BISMUTH OXIDE: STRUCTURAL PHENOMENA IN PEROVSKITE HETEROEPITAXY
Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
10
Conference Proceedings
Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates
Trans Tech Publications |
MRS - Materials Research Society |
11
Conference Proceedings
Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates
Trans Tech Publications |
Materials Research Society |
Electrochemical Society |