Models of Oxygen Loss and Thermal Donor Formation in Silicon by the Clustering of Rapidly Diffusing Oxygen Dimers

Models of Oxygen Loss and Thermal Donor Formation in Silicon by the Clustering of Rapidly Diffusing Oxygen Dimers

Author(s):

Publication title:

Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995

Title of ser.:

Materials science forum

Ser. no.:

196-201

Pub. Year:

1995

Pt.:

3

Page(from):

1309

Page(to):

1314

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497164 [0878497161]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020219
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors : ICDS
Conf. info. (Number):	18th
Conf. info. (Venue):	Sendai, Japan
Conf. info. (Date):	1995.07.23-1995.07.28

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