Electrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky Contacts

Electrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky Contacts

Author(s):

Publication title:

Molecular beam epitaxy : proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, Oct. 2-7, 1989

Title of ser.:

Materials science forum

Ser. no.:

69

Pub. Year:

1991

Page(from):

99

Page(to):

100

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496143 [0878496149]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00016492
Series ID:	PA00000012
Conf. info. (Name):	International Symposium on Molecular Beam Epitaxy
Conf. info. (Number):	3rd
Conf. info. (Venue):	Velico Tarnovo, Bulgaria
Conf. info. (Date):	1989.10.02-1989.10.07

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