Coupling between hot-carrier degradation modes of pMOSFETs

Coupling between hot-carrier degradation modes of pMOSFETs

Author(s):

Janapaty,V. ( Vanderbilt Univ. )
Bhuva,B.L. ( Vanderbilt Univ. )
Bui,N. ( Advanced Micro Devices,Inc. )
Kerns,S.E. ( Vanderbilt Univ. )

Publication title:

Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3216

Pub. Year:

1997

Page(from):

145

Page(to):

148

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426482 [0819426482]

Language:

English

Call no.:

P63600/3216

Type:

Conference Proceedings

Details

TDL ID:	ZA00016460
Series ID:	PA00000029
Conf. info. (Name):	Microelectronic Manufacturing : Microelectronic Manufacturing Yield, Reliability, and Failure Analysis
Conf. info. (Number):	1997 : 3rd
Conf. info. (Venue):	Austin, TX, USA
Conf. info. (Date):	1997.10.01-1997.10.02

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