Hot-carrier effects in sub-100-nm gate-length N-MOSFETs with thermal and nitrided oxide thickness down to 1.3 nm

Hot-carrier effects in sub-100-nm gate-length N-MOSFETs with thermal and nitrided oxide thickness down to 1.3 nm

Author(s):

Yeap,G.C.-F. ( Advanced Micro Devices,Inc. )
Song,M. ( Advanced Micro Devices,Inc. )
Xiang,Q. ( Advanced Micro Devices,Inc. )
Han,K.M. ( Advanced Micro Devices,Inc. )
Lin,M.-R. ( Advanced Micro Devices,Inc. )

Publication title:

Microelectronic device technology II : 23-24 September, 1998, Santa Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3506

Pub. Year:

1998

Page(from):

265

Page(to):

270

Pub. info.:

Bellingham, Washington: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819429650 [0819429651]

Language:

English

Call no.:

P63600/3506

Type:

Conference Proceedings

Details

TDL ID:	ZA00016438
Series ID:	PA00000029
Conf. info. (Name):	Microelectronic Manufacturing : Microelectronic device technology
Conf. info. (Number):	1998 : 2nd
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1998.09.23-1998.09.24

Similar Items:

1 Conference Proceedings Sub-100-nm and deep sub-100-nm MOS transistor gate patterning Xiang,Q., Gupta,S., Spence,C.A., Singh,B., Yeap,G.C.-F., Lin,M.-R. SPIE-The International Society for Optical Engineering	7 Conference Proceedings Gate line-edge roughness effects in 50-nm bulk MOSFET devices Xiong, S., Bokor, J., Xiang, Q., Fisher, P., Dudley, I.M., Rao, P. SPIE-The International Society for Optical Engineering
2 Conference Proceedings Effects of indium implant and post-RTA on performance and reliability of sub-100-nm retrograde channel NMOSFETs Xiang,Q., Yu,B., Yeap,G.C.-F., Lin,M.-R. SPIE - The International Society for Optical Engineering	8 Conference Proceedings Enhanced Short-Channel Effects of Sub-50 nm Gate Length MOSFETs with High-k Gate Insulator Films Fujimura, R., Takeda, M., Sato, K., Ohmi, S.-I., Ishiwara, H., Iwai, H. Electrochemical Society
3 Conference Proceedings High-k scaling for gate insulators: an insightful study Krishnan,S., Yeap,G.C.-F., Yu,B., Xiang,Q., Lin,M.-R. SPIE-The International Society for Optical Engineering	9 Conference Proceedings Optimization of side gate length and side gate voltage for sub-100-nm double-gate MOSFET Kim, J.-H., Kim, G.-H., Ko, S.-W., Jung, H.-K. SPIE-The International Society for Optical Engineering
4 Conference Proceedings Hot-Carrier Properties of Sub-Micron MOSFETs with NO-Annealed Gate Oxides Yao, Z.-Q., Ghodsi, R., Harrison, H.B., Dimitrijev, S., Yeow, T.Y. Electrochemical Society	10 Conference Proceedings Improved hot-carrier reliability of MOSFET analog performance with NO-nitrided SiO2 gate dielectrics Han,L.K., Kwong,D. SPIE-The International Society for Optical Engineering
5 Conference Proceedings Multiple Gate MOSFETs W. P. Maszara, Z. Krivokapic, Q. Xiang, M. Lin Electrochemical Society	11 Conference Proceedings TCAD Modeling and Simulation of Sub-100nm Gate Length Silicon and GaN Based SOI MOSFETs Lei Ma, Yawei Jin, Chang Zeng, Krishnanshu Dandu, Mark Johnson, Doug William Barlage Materials Research Society
6 Conference Proceedings Gate-Length-and threshold-voltage-dependent nonlinearity in the hot carrier DC Lifetime extrapolation for sub-100-nm NMOS devices Chheda,S.N., Bhat,N., Tsui,P., Gonzales,S., Cave,N., Fu,C.-C., Huang,F., Nangia,A., Choi,P.S.-J., Collins,S. SPIE - The International Society for Optical Engineering	12 Conference Proceedings Performance Trade-offs by the use of High-K Gate Dielectrics in Sub 100 nm Channel Length MOSFETs Sharma,Sharad, Rao,V.Ramgopal SPIE - The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12