High-quality carbon-doped GaAs/AIGaAs material growth by MOCVD and its application for optoelectronic devices

High-quality carbon-doped GaAs/AIGaAs material growth by MOCVD and its application for optoelectronic devices

Author(s):

Lian,P. ( Beijing Polytechnic Univ.(China) )

Yin,T. ( Beijing Polytechnic Univ.(China) )

Xu,Z. ( Beijing Polytechnic Univ.(China) )

Zhao,H. ( Beijing Polytechnic Univ.(China) )

Zou,D. ( Beijing Polytechnic Univ.(China) )

Gao,G. ( Beijing Polytechnic Univ.(China) )

Du,J. ( Beijing Polytechnic Univ.(China) )

Chen,C. ( Beijing Polytechnic Univ.(China) )

Tao,C. ( Beijing Polytechnic Univ.(China) )

Chen,J. ( Beijing Polytechnic Univ.(China) )

Shen,G. ( Beijing Polytechnic Univ.(China) )

Cao,Q. ( Institute of Semiconductors (China) )

Ma,X. ( Institute of Semiconductors (China) )

Chen,L. ( Institute of Semiconductors (China) )

9 more

Publication title:

Semiconductor Lasers III

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3547

Pub. Year:

1998

Page(from):

278

Page(to):

284

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819430083 [0819430080]

Language:

English

Call no.:

P63600/3547

Type:

Conference Proceedings

Details

TDL ID:	ZA00016437
Series ID:	PA00000029
Conf. info. (Name):	Photonics China : Semiconductor Lasers
Conf. info. (Number):	1998 : 3rd
Conf. info. (Venue):	Beijing, China
Conf. info. (Date):	1998.09.16-1998.09.18

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