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Growth and fabrication of high-performance 980-nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AIGaAs

Author(s):
Yang,G. ( Institute of Semiconductors (China) )
Xu,Z. ( Institute of Semiconductors (China) )
Xu,J. ( Institute of Semiconductors (China) )
Ma,X. ( Institute of Semiconductors (China) )
Zhang,J. ( Institute of Semiconductors (China) )
Chen,L. ( Institute of Semiconductors (China) )
1 more
Publication title:
Semiconductor Lasers III
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3547
Pub. Year:
1998
Page(from):
64
Page(to):
70
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819430083 [0819430080]
Language:
English
Call no.:
P63600/3547
Type:
Conference Proceedings

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